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RD3G07BATTL1

Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W

Product family

Manufacturer: ROHM SEMICONDUCTOR

Manufacturer part number:
RD3G07BATTL1
TME Symbol:
RD3G07BATTL1

Specification

Manufacturer
ROHM SEMICONDUCTOR
Type of transistor
P-MOSFET
Polarisation
unipolar
Drain-source voltage
-40V
Drain current
-70A
Pulsed drain current
-140A
Power dissipation
101W
Case
DPAK, TO252
Gate-source voltage
±20V
On-state resistance
8.7mΩ
Mounting
SMD
Gate charge
105nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight1 g
Certificates

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RD3G07BATTL1
0 in TME stock
Net price for quantities from 2500 pcs - 0.93 USDGross price for quantities from 2500 pcs - 0.93 USD
Net price for quantities from 5000 pcs - 0.90 USDGross price for quantities from 5000 pcs - 0.90 USD
Net price for quantities from 7500 pcs - 0.87 USDGross price for quantities from 7500 pcs - 0.87 USD
No. of pieces (Multiplicity: 2 500)
Minimum order quantity: 2 500.
Multiplicity: 2 500.