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B1M080120HK

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
B1M080120HK
TME Symbol:
B1M080120HK

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
27A
Pulsed drain current
80A
Power dissipation
241W
Case
TO247-4
Gate-source voltage
-5...20V
On-state resistance
80mΩ
Mounting
THT
Gate charge
149nC
Kind of package
tube
Kind of channel
enhancement
Features of semiconductor devices
Kelvin terminal
Gross weight6.7 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
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B1M080120HK
13 in TME stock
Net price for quantities from 1 pcs - 22.91 USDGross price for quantities from 1 pcs - 22.91 USD
Net price for quantities from 5 pcs - 20.62 USDGross price for quantities from 5 pcs - 20.62 USD
Net price for quantities from 30 pcs - 18.21 USDGross price for quantities from 30 pcs - 18.21 USD
Net price for quantities from 150 pcs - 15.23 USDGross price for quantities from 150 pcs - 15.23 USD
Net price for quantities from 600 pcs - 15.04 USDGross price for quantities from 600 pcs - 15.04 USD
No. of pieces (Multiplicity: 1)
Product available till the stock lasts
Packaging method by the manufacturerTube = 30 pcs