B2M065120Z
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Manufacturer: BASiC SEMICONDUCTOR
Manufacturer part number:
B2M065120Z
TME Symbol:
B2M065120Z
Specification
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1.2kV | |
Drain current | 33A | |
Pulsed drain current | 85A | |
Power dissipation | 250W | |
Case | TO247-4 | |
Gate-source voltage | -4...18V | |
On-state resistance | 65mΩ | |
Mounting | THT | |
Gate charge | 60nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Gross weight6.647 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
* B2M065120ZNo. of pieces (Multiplicity: 1)
26 in TME stock
Net price for quantities from 1 pcs - 13.00 USDGross price for quantities from 1 pcs - 13.00 USD
Net price for quantities from 3 pcs - 11.70 USDGross price for quantities from 3 pcs - 11.70 USD
Net price for quantities from 10 pcs - 10.31 USDGross price for quantities from 10 pcs - 10.31 USD
Net price for quantities from 30 pcs - 9.27 USDGross price for quantities from 30 pcs - 9.27 USD
Packaging method by the manufacturerTube = 30 pcs