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B2M080120ZL

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 68A; 187W

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
B2M080120ZL
TME Symbol:
B2M080120ZL

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
28A
Pulsed drain current
68A
Power dissipation
187W
Case
TO247-4
Gate-source voltage
-4...18V
On-state resistance
80mΩ
Mounting
THT
Gate charge
46nC
Kind of package
tube
Kind of channel
enhancement
Features of semiconductor devices
Kelvin terminal
Gross weight1 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
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B2M080120ZL
0 in TME stock
Net price for quantities from 1 pcs - 2.47 USDGross price for quantities from 1 pcs - 2.47 USD
Net price for quantities from 10 pcs - 2.22 USDGross price for quantities from 10 pcs - 2.22 USD
Net price for quantities from 30 pcs - 1.96 USDGross price for quantities from 30 pcs - 1.96 USD
Net price for quantities from 120 pcs - 1.77 USDGross price for quantities from 120 pcs - 1.77 USD
Net price for quantities from 300 pcs - 1.65 USDGross price for quantities from 300 pcs - 1.65 USD
No. of pieces (Multiplicity: 1)