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B2M600170H

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 10A; 75W

Documentation EN

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
B2M600170H
TME Symbol:
B2M600170H

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.7kV
Drain current
5A
Pulsed drain current
10A
Power dissipation
75W
Case
TO247-3
Gate-source voltage
-4...18V
On-state resistance
0.6Ω
Mounting
THT
Gate charge
14nC
Kind of package
tube
Kind of channel
enhancement
Gross weight6.2 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
*
B2M600170H
0 in TME stock
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Net price for quantities from 1 pcs - 2.85 USDGross price for quantities from 1 pcs - 2.85 USD
Net price for quantities from 10 pcs - 2.54 USDGross price for quantities from 10 pcs - 2.54 USD
Net price for quantities from 30 pcs - 2.25 USDGross price for quantities from 30 pcs - 2.25 USD
Net price for quantities from 120 pcs - 2.03 USDGross price for quantities from 120 pcs - 2.03 USD
Net price for quantities from 300 pcs - 1.90 USDGross price for quantities from 300 pcs - 1.90 USD
Packaging method by the manufacturer:Tube = 30 pcs