B2M600170R
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 10A; 60W
Manufacturer: BASiC SEMICONDUCTOR
Manufacturer part number:
B2M600170R
TME Symbol:
B2M600170R
Specification
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1.7kV | |
Drain current | 4A | |
Pulsed drain current | 10A | |
Power dissipation | 60W | |
Case | TO263-7 | |
Gate-source voltage | -4...18V | |
On-state resistance | 0.6Ω | |
Mounting | SMD | |
Gate charge | 14nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Gross weight1 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: SMD N channel transistors BASiC SEMICONDUCTOR,
* B2M600170RNo. of pieces (Multiplicity: 800)
0 in TME stock
Net price for quantities from 800 pcs - 2.30 USDGross price for quantities from 800 pcs - 2.30 USD