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Here you will find out moreManufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 750V | |
Drain current | 169A | |
Pulsed drain current | 480A | |
Power dissipation | 750W | |
Case | TO247-3 | |
Gate-source voltage | -5...18V | |
On-state resistance | 10mΩ | |
Mounting | THT | |
Gate charge | 0.22µC | |
Kind of package | tube | |
Kind of channel | enhancement |