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B3M020120ZL

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 225A; 600W

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
B3M020120ZL
TME Symbol:
B3M020120ZL

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
90A
Pulsed drain current
225A
Power dissipation
600W
Case
TO247-4
Gate-source voltage
-5...18V
On-state resistance
20mΩ
Mounting
THT
Gate charge
168nC
Kind of package
tube
Kind of channel
enhancement
Features of semiconductor devices
Kelvin terminal
Gross weight1 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
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B3M020120ZL
0 in TME stock
Net price for quantities from 1 pcs - 5.26 USDGross price for quantities from 1 pcs - 5.26 USD
Net price for quantities from 10 pcs - 4.73 USDGross price for quantities from 10 pcs - 4.73 USD
Net price for quantities from 30 pcs - 4.18 USDGross price for quantities from 30 pcs - 4.18 USD
Net price for quantities from 120 pcs - 3.76 USDGross price for quantities from 120 pcs - 3.76 USD
Net price for quantities from 300 pcs - 3.50 USDGross price for quantities from 300 pcs - 3.50 USD
No. of pieces (Multiplicity: 1)