BGH50N65ZF1
Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Manufacturer: BASiC SEMICONDUCTOR
Manufacturer part number:
BGH50N65ZF1
TME Symbol:
BGH50N65ZF1
Specification
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | IGBT | |
Technology | Field Stop, SiC SBD, Trench | |
Collector-emitter voltage | 650V | |
Collector current | 50A | |
Power dissipation | 357W | |
Case | TO247-4 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 200A | |
Mounting | THT | |
Gate charge | 308nC | |
Kind of package | tube | |
Turn-on time | 54ns | |
Turn-off time | 476ns | |
Features of semiconductor devices | integrated anti-parallel diode |
Gross weight6.72 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: THT IGBT transistors BASiC SEMICONDUCTOR,
* BGH50N65ZF1No. of pieces (Multiplicity: 1)
26 in TME stock
Net price for quantities from 1 pcs - 9.76 USDGross price for quantities from 1 pcs - 9.76 USD
Net price for quantities from 5 pcs - 8.78 USDGross price for quantities from 5 pcs - 8.78 USD
Net price for quantities from 30 pcs - 7.76 USDGross price for quantities from 30 pcs - 7.76 USD
Net price for quantities from 150 pcs - 6.51 USDGross price for quantities from 150 pcs - 6.51 USD
Net price for quantities from 600 pcs - 6.27 USDGross price for quantities from 600 pcs - 6.27 USD
Product available till the stock lasts
Packaging method by the manufacturerTube = 30 pcs