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Due to air traffic closures or restrictions in the Middle East region, we would like to inform you of supply difficulties and the possibility of order delays.
We apologise for any inconvenience.

IMPORTANT: All international orders are subject to customs and duty fees as defined by the country of import. Customs and duty fees are not included in your TME order and/or shipping total. TME is not responsible for fees associated with import. All fees must be paid by the parcel recipient. Orders shipped and unclaimed or refused by customers will be managed under the TME protocol.

2N7000BU

Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92


Manufacturer: ONSEMI

Manufacturer part number:
2N7000BU
TME Symbol:
2N7000BU

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET
Technology
DMOS
Polarisation
unipolar
Drain-source voltage
60V
Drain current
0.11A
Pulsed drain current
1A
Power dissipation
0.4W
Case
TO92
Gate-source voltage
±30V
On-state resistance
Mounting
THT
Kind of package
bulk
Kind of channel
enhancement
Gross weight1 g
Certificates
See other products in this category: THT N channel transistors ONSEMI,
*
2N7000BU
0 in TME stock
Net price for quantities from 10000 pcs - 0.10 USDGross price for quantities from 10000 pcs - 0.10 USD
Net price for quantities from 30000 pcs - 0.09 USDGross price for quantities from 30000 pcs - 0.09 USD
No. of pieces (Multiplicity: 10 000)
Minimum order quantity: 10 000.
Multiplicity: 10 000.