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Manufacturer	ALPHA & OMEGA SEMICONDUCTOR
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	12V
Power dissipation	2.5W
Case	DFN6
Gate-source voltage	±8V
On-state resistance	5mΩ
Mounting	SMD
Gate charge	35nC
Kind of channel	enhancement
Semiconductor structure	common drain
Version	ESD

AOC3868

Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain

Specification

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