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Manufacturer	ALPHA & OMEGA SEMICONDUCTOR
Type of transistor	IGBT
Collector-emitter voltage	650V
Collector current	5A
Power dissipation	21W
Case	TO252
Gate-emitter voltage	±30V
Pulsed collector current	15A
Mounting	SMD
Gate charge	9.2nC
Kind of package	reel, tape
Turn-on time	23ns
Turn-off time	114ns
Collector-emitter saturation voltage	2.5V
Turn-off switching energy	0.049mJ
Turn-on switching energy	0.081mJ

AOD5B65N1

Transistor: IGBT; 650V; 5A; 21W; TO252; Eoff: 0.049mJ; Eon: 0.081mJ

Specification