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Manufacturer	ALPHA & OMEGA SEMICONDUCTOR
Type of transistor	IGBT
Collector-emitter voltage	650V
Collector current	10A
Power dissipation	12W
Case	TO220F
Gate-emitter voltage	±30V
Pulsed collector current	30A
Mounting	THT
Gate charge	24nC
Kind of package	tube
Turn-on time	28ns
Turn-off time	131ns
Collector-emitter saturation voltage	1.6V
Turn-off switching energy	0.13mJ
Turn-on switching energy	0.18mJ

AOTF10B65M2

Transistor: IGBT; 650V; 10A; 12W; TO220F; Eoff: 0.13mJ; Eon: 0.18mJ

Specification