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Manufacturer	ALPHA & OMEGA SEMICONDUCTOR
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	60V
Drain current	36.5A
Power dissipation	23.5W
Case	TO251B
Gate-source voltage	±20V
On-state resistance	9.5mΩ
Mounting	THT
Gate charge	14.5nC
Kind of channel	enhancement
Version	ESD

AOY2610E

Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251B; ESD

Specification