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Manufacturer	MICROCHIP TECHNOLOGY
Type of transistor	IGBT
Technology	POWER MOS 7®, PT
Collector-emitter voltage	1.2kV
Collector current	46A
Power dissipation	543W
Case	T-Max
Gate-emitter voltage	±30V
Pulsed collector current	140A
Mounting	THT
Gate charge	150nC
Kind of package	tube
Turn-on time	36ns
Turn-off time	0.22µs
Features of semiconductor devices	integrated anti-parallel diode

APT35GP120B2D2G

Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand