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Manufacturer	MICROCHIP TECHNOLOGY
Type of transistor	IGBT
Technology	NPT, POWER MOS 8®
Collector-emitter voltage	1.2kV
Collector current	40A
Power dissipation	500W
Case	T-Max
Gate-emitter voltage	±30V
Pulsed collector current	160A
Mounting	THT
Gate charge	0.21µC
Kind of package	tube
Turn-on time	47ns
Turn-off time	232ns
Features of semiconductor devices	integrated anti-parallel diode
Part status	Not recommended for new designs

APT40GR120B2D30

Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand