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Manufacturer	BASiC SEMICONDUCTOR
Type of transistor	IGBT
Technology	Field Stop, SiC SBD, Trench
Collector-emitter voltage	650V
Collector current	50A
Power dissipation	357W
Case	TO247-3
Gate-emitter voltage	±20V
Pulsed collector current	200A
Mounting	THT
Gate charge	308nC
Kind of package	tube
Turn-on time	54ns
Turn-off time	256ns
Features of semiconductor devices	integrated anti-parallel diode

BGH50N65HS1

Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand