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Manufacturer	BASiC SEMICONDUCTOR
Type of transistor	IGBT
Technology	Field Stop, SiC SBD, Trench
Collector-emitter voltage	650V
Collector current	75A
Power dissipation	405W
Case	TO247-3
Gate-emitter voltage	±20V
Pulsed collector current	300A
Mounting	THT
Gate charge	444nC
Kind of package	tube
Turn-on time	104ns
Turn-off time	376ns
Features of semiconductor devices	integrated anti-parallel diode

BGH75N65HF1

Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand