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Manufacturer	TEXAS INSTRUMENTS
Type of transistor	N-MOSFET
Technology	NexFET™
Polarisation	unipolar
Drain-source voltage	30V
Drain current	5A
Power dissipation	2.3W
Case	WSON6
Gate-source voltage	±20V
On-state resistance	35.5mΩ
Mounting	SMD
Gate charge	2.2nC
Kind of package	reel, tape
Kind of channel	enhancement
Dimensions	2x2mm

CSD87502Q2T

Transistor: N-MOSFET; unipolar; 30V; 5A; 2.3W; WSON6; 2x2mm

Specification

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