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Manufacturer	INFINEON TECHNOLOGIES
Type of semiconductor module	IGBT
Semiconductor structure	diode/transistor
Topology	boost chopper, NTC thermistor, three-phase diode bridge
Max. off-state voltage	1.6kV
Collector current	50A
Electrical mounting	Press-in PCB
Gate-emitter voltage	±20V
Pulsed collector current	100A
Power dissipation	335W
Mechanical mounting	screw

DDB6U75N16W1RB11BO

Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 335W

Specification