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Manufacturer	STARPOWER SEMICONDUCTOR
Type of transistor	IGBT
Collector-emitter voltage	600V
Collector current	24A
Power dissipation	235W
Case	TO220
Gate-emitter voltage	±20V
Pulsed collector current	45A
Mounting	THT
Gate charge	0.1µC
Kind of package	tube
Turn-on time	23ns
Turn-off time	208ns
Features of semiconductor devices	integrated anti-parallel diode

DG15X06T1

Transistor: IGBT; 600V; 24A; 235W; TO220

Specification