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Manufacturer	STARPOWER SEMICONDUCTOR
Type of transistor	IGBT
Collector-emitter voltage	650V
Collector current	30A
Power dissipation	208W
Case	TO247
Gate-emitter voltage	±20V
Pulsed collector current	90A
Mounting	THT
Gate charge	0.22µC
Kind of package	tube
Turn-on time	0.1µs
Turn-off time	306ns
Features of semiconductor devices	integrated anti-parallel diode

DG30X07T2

Transistor: IGBT; 650V; 30A; 208W; TO247

Specification