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Manufacturer	STARPOWER SEMICONDUCTOR
Type of transistor	IGBT
Collector-emitter voltage	1.2kV
Collector current	50A
Power dissipation	672W
Case	TO247PLUS
Gate-emitter voltage	±20V
Pulsed collector current	150A
Mounting	THT
Gate charge	0.37µC
Kind of package	tube
Turn-on time	172ns
Turn-off time	338ns
Features of semiconductor devices	integrated anti-parallel diode

DG50Q12T2

Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS

Specification