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Due to air traffic closures or restrictions in the Middle East region, we would like to inform you of supply difficulties and the possibility of order delays.
We apologise for any inconvenience.

IMPORTANT: All international orders are subject to customs and duty fees as defined by the country of import. Customs and duty fees are not included in your TME order and/or shipping total. TME is not responsible for fees associated with import. All fees must be paid by the parcel recipient. Orders shipped and unclaimed or refused by customers will be managed under the TME protocol.

F475R12KS4BOSA1

Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A

Manufacturer: INFINEON TECHNOLOGIES

Manufacturer part number:
F475R12KS4BOSA1
TME Symbol:
F475R12KS4BOSA1

Specification

Manufacturer
INFINEON TECHNOLOGIES
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge x2, NTC thermistor
Max. off-state voltage
1.2kV
Collector current
75A
Case
AG-ECONO2-6
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
150A
Power dissipation
500W
Technology
EconoPACK™ 2
Mechanical mounting
screw
Gross weight180 g
Certificates
See other products in this category: IGBT modules INFINEON TECHNOLOGIES
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F475R12KS4BOSA1
Product withdrawn from the offer
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