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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	600V
Drain current	29.7A
Pulsed drain current	141A
Power dissipation	417W
Case	TO3PN
Gate-source voltage	±30V
On-state resistance	70mΩ
Mounting	THT
Gate charge	0.27µC
Kind of package	tube
Kind of channel	enhancement

FCA47N60

Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN

Specification