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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	600V
Drain current	48.7A
Pulsed drain current	231A
Power dissipation	592W
Case	TO247
Gate-source voltage	±20V
On-state resistance	36mΩ
Mounting	THT
Gate charge	285nC
Kind of package	tube
Kind of channel	enhancement

FCH041N60E

Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247

Specification