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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Technology	SJ-MOSFET
Polarisation	unipolar
Drain-source voltage	600V
Drain current	7A
Pulsed drain current	33A
Power dissipation	36W
Case	TO220FP
Gate-source voltage	±30V
On-state resistance	0.38Ω
Mounting	THT
Gate charge	52nC
Kind of package	tube
Kind of channel	enhancement

FCPF11N60F

Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W

Specification