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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	300V
Drain current	35A
Pulsed drain current	236A
Power dissipation	500W
Case	TO3PN
Gate-source voltage	±30V
On-state resistance	56mΩ
Mounting	THT
Gate charge	0.1µC
Kind of package	tube
Kind of channel	enhancement

FDA59N30

Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN

Specification