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Due to air traffic closures or restrictions in the Middle East region, we would like to inform you of supply difficulties and the possibility of order delays.
We apologise for any inconvenience.

IMPORTANT: All international orders are subject to customs and duty fees as defined by the country of import. Customs and duty fees are not included in your TME order and/or shipping total. TME is not responsible for fees associated with import. All fees must be paid by the parcel recipient. Orders shipped and unclaimed or refused by customers will be managed under the TME protocol.

FDG6335N

Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W

Manufacturer: ONSEMI

Manufacturer part number:
FDG6335N
TME Symbol:
FDG6335N

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET x2
Technology
PowerTrench®
Polarisation
unipolar
Drain-source voltage
20V
Drain current
0.7A
Power dissipation
0.3W
Case
SC70-6, SC88, SOT363
Gate-source voltage
±12V
On-state resistance
442mΩ
Mounting
SMD
Gate charge
1.4nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.014 g
Certificates

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FDG6335N
Product withdrawn from the offer
Use the specification table below to search for similar products
Packaging method by the manufacturerReel = 3 000 pcs