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Manufacturer	ONSEMI
Type of transistor	N/P-MOSFET x2
Polarisation	unipolar
Drain-source voltage	100/-80V
Drain current	6/-6A
Power dissipation	2.5W
Case	WDFN12
Gate-source voltage	±20V
On-state resistance	323/191mΩ
Mounting	SMD
Gate charge	19/5nC
Kind of package	reel, tape
Kind of channel	enhancement
Semiconductor structure	common drain
Features of semiconductor devices	MOSFET H-Bridge

FDMQ8203

Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12

Specification

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