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Manufacturer	ONSEMI
Type of transistor	N-MOSFET x2
Technology	PowerTrench®
Polarisation	unipolar
Drain-source voltage	30/30V
Drain current	30/40A
Pulsed drain current	40...100A
Power dissipation	2.2/2.5W
Case	PQFN8
Gate-source voltage	±20/±20V
On-state resistance	10.8/4mΩ
Mounting	SMD
Gate charge	29/66nC
Kind of package	reel, tape
Kind of channel	enhancement
Semiconductor structure	asymmetric

FDMS3604S

Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A

Specification

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