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Manufacturer	ONSEMI
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	30V
Drain current	20/55A
Power dissipation	1.6/2W
Case	PQFN8
Gate-source voltage	±20V
On-state resistance	6.4/1.9mΩ
Mounting	SMD
Gate charge	13/44nC
Kind of package	reel, tape
Kind of channel	enhancement
Semiconductor structure	asymmetric

FDPC8013S

Transistor: N-MOSFET x2; unipolar; 30V; 20/55A; 1.6/2W; PQFN8

Specification