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Manufacturer	ONSEMI
Type of transistor	P-MOSFET x2
Technology	PowerTrench®
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-6A
Power dissipation	1.6W
Case	SO8
Gate-source voltage	±8V
On-state resistance	48mΩ
Mounting	SMD
Gate charge	31nC
Kind of package	reel, tape
Kind of channel	enhancement

FDS6875

Transistor: P-MOSFET x2; unipolar; -20V; -6A; 1.6W; SO8

Specification