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Manufacturer	ONSEMI
Type of transistor	N-MOSFET x2
Technology	PowerTrench®
Polarisation	unipolar
Drain-source voltage	30V
Drain current	6A
Power dissipation	1.6W
Case	SO8
Gate-source voltage	±20V
On-state resistance	28mΩ
Mounting	SMD
Gate charge	8.1nC
Kind of package	reel, tape
Kind of channel	enhancement
Features of semiconductor devices	logic level

FDS6912A

Transistor: N-MOSFET x2; unipolar; 30V; 6A; 1.6W; SO8

Specification