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Manufacturer	ONSEMI
Type of transistor	IGBT
Collector-emitter voltage	650V
Collector current	60A
Power dissipation	153W
Case	TO3PN
Gate-emitter voltage	±20V
Pulsed collector current	180A
Mounting	THT
Gate charge	84nC
Kind of package	tube
Features of semiconductor devices	integrated anti-parallel diode

FGA6560WDF

Transistor: IGBT; 650V; 60A; 153W; TO3PN

Specification