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Manufacturer	ONSEMI
Type of transistor	IGBT
Collector-emitter voltage	1.2kV
Collector current	40A
Power dissipation	277W
Case	TO247-3
Gate-emitter voltage	±25V
Pulsed collector current	160A
Mounting	THT
Gate charge	0.37µC
Kind of package	tube
Features of semiconductor devices	integrated anti-parallel diode

FGH40T120SMD

Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3

Specification