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Manufacturer	ONSEMI
Type of transistor	IGBT
Collector-emitter voltage	600V
Collector current	40A
Power dissipation	116W
Case	TO247-3
Gate-emitter voltage	±20V
Pulsed collector current	160A
Mounting	THT
Gate charge	0.12µC
Kind of package	tube
Features of semiconductor devices	integrated anti-parallel diode

FGH80N60FDTU

Transistor: IGBT; 600V; 40A; 116W; TO247-3

Specification