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Manufacturer	IXYS
Type of transistor	N-MOSFET x2
Technology	PolarHV™
Polarisation	unipolar
Drain-source voltage	600V
Drain current	12A
Pulsed drain current	66A
Power dissipation	130W
Case	ISOPLUS i4-pac™ x024a
Gate-source voltage	±30V
On-state resistance	0.35Ω
Mounting	THT
Gate charge	58nC
Kind of package	tube
Kind of channel	enhancement
Semiconductor structure	double series
Reverse recovery time	200ns

FMM22-06PF

Transistor: N-MOSFET x2; PolarHV™; unipolar; 600V; 12A; Idm: 66A

Specification