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Manufacturer	IXYS
Type of transistor	N-MOSFET x2
Technology	HiPerFET™, Trench
Polarisation	unipolar
Drain-source voltage	250V
Drain current	30A
Pulsed drain current	130A
Power dissipation	125W
Case	ISOPLUS i4-pac™ x024a
Gate-source voltage	±30V
On-state resistance	60mΩ
Mounting	THT
Gate charge	78nC
Kind of package	tube
Kind of channel	enhancement
Semiconductor structure	double series
Reverse recovery time	84ns

FMM50-025TF

Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A

Specification