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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	1kV
Drain current	5A
Power dissipation	225W
Case	TO3PN
Gate-source voltage	±30V
On-state resistance	1.45Ω
Mounting	THT
Kind of package	tube
Kind of channel	enhancement

FQA8N100C

Transistor: N-MOSFET; unipolar; 1000V; 5A; 225W; TO3PN

Specification

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