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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	30V
Drain current	10/11A
Pulsed drain current	40...44A
Power dissipation	2W
Case	uDFN8
Gate-source voltage	±20V
On-state resistance	20/16.5mΩ
Mounting	SMD
Gate charge	6/7.4nC
Kind of package	reel, tape
Kind of channel	enhancement

HS8K1TB

Transistor: N-MOSFET x2; unipolar; 30V; 10/11A; Idm: 40÷44A; 2W

Specification

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