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Manufacturer	INFINEON TECHNOLOGIES
Type of transistor	N-MOSFET
Technology	OptiMOS™
Polarisation	unipolar
Drain-source voltage	600V
Drain current	6A
Power dissipation	51W
Case	PG-TO252-3
Gate-source voltage	±20V
On-state resistance	0.536Ω
Mounting	SMD
Gate charge	18nC
Kind of channel	enhancement

IPD60R280CFD7

Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3

Specification

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