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Manufacturer	INFINEON TECHNOLOGIES
Type of transistor	N-MOSFET
Technology	HEXFET®
Polarisation	unipolar
Drain-source voltage	55V
Drain current	220A
Power dissipation	130W
Case	TO220AB
Gate-source voltage	±20V
On-state resistance	3.3mΩ
Mounting	THT
Gate charge	0.19µC
Kind of package	tube
Kind of channel	enhancement

IRF3805PBF

Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB

Specification