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Manufacturer	Infineon (IRF)
Type of transistor	N-MOSFET x2
Technology	HEXFET®
Polarisation	unipolar
Drain-source voltage	50V
Drain current	3A
Power dissipation	2W
Case	SO8
Gate-source voltage	±20V
On-state resistance	0.13Ω
Mounting	SMD
Gate charge	12nC
Kind of channel	enhancement

IRF7103PBF

Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8

Specification