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Manufacturer	INFINEON TECHNOLOGIES
Type of transistor	N-MOSFET
Technology	HEXFET®
Polarisation	unipolar
Drain-source voltage	300V
Drain current	38A
Power dissipation	341W
Case	TO220AB
Gate-source voltage	±20V
On-state resistance	56mΩ
Mounting	THT
Gate charge	83nC
Kind of package	tube
Kind of channel	enhancement

IRFB4137PBF

Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB

Specification