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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	600V
Drain current	3.9A
Pulsed drain current	25A
Power dissipation	130W
Case	D2PAK, TO263
Gate-source voltage	±20V
On-state resistance	1.2Ω
Mounting	SMD
Gate charge	60nC
Kind of package	reel, tape
Kind of channel	enhancement

IRFBC40STRLPBF

Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W

Specification