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Manufacturer	INFINEON TECHNOLOGIES
Type of transistor	N-MOSFET
Technology	HEXFET®
Polarisation	unipolar
Drain-source voltage	300V
Drain current	70A
Power dissipation	517W
Case	TO247AC
Gate-source voltage	±20V
On-state resistance	32mΩ
Mounting	THT
Gate charge	180nC
Kind of package	tube
Kind of channel	enhancement

IRFP4868PBF

Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC

Specification