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Manufacturer	INFINEON TECHNOLOGIES
Type of transistor	N-MOSFET x2
Technology	HEXFET®
Polarisation	unipolar
Drain-source voltage	30V
Drain current	8.1A
Power dissipation	2.5W
Case	SO8
Gate-source voltage	±12V
On-state resistance	17.9mΩ
Mounting	SMD
Kind of package	reel, tape
Kind of channel	enhancement
Features of semiconductor devices	logic level

IRL6372TRPBF

Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8

Specification