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Manufacturer	IXYS
Type of semiconductor module	IGBT
Semiconductor structure	diode/transistor
Topology	IGBT half-bridge
Max. off-state voltage	1.2kV
Collector current	45A
Case	SMPD-B
Electrical mounting	SMT
Gate-emitter voltage	±20V
Pulsed collector current	105A
Power dissipation	230W
Technology	ISOPLUS™, Sonic FRD™

IXA40PG1200DHGLB

Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV

Specification