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Manufacturer	IXYS
Type of transistor	IGBT
Technology	BiMOSFET™
Collector-emitter voltage	1.6kV
Collector current	16A
Power dissipation	250W
Case	ISOPLUS i4-pac™ x024c
Gate-emitter voltage	±20V
Pulsed collector current	40A
Mounting	THT
Gate charge	130nC
Kind of package	tube
Turn-on time	260ns
Turn-off time	340ns
Features of semiconductor devices	high voltage

IXBF40N160

Transistor: IGBT; BiMOSFET™; 1.6kV; 16A; 250W

Specification